Abstract:
The effect of the interface roughness on performance of Resonance Tunneling Diode has been theoretically
studied, especially the V-I characteristic curve, at which the Negative Differential Resistance present. The complicated
structure of the interface is among the major factors of electron scattering; as a result it affects the I-V curves of the device. We
propose a theoretical model to represent the interface structure. Here, we assume that, the interface morphology is purely
random. It has been noticed that the third interface is the most influential among others. It also turns out that Fermi energy
plays a role in minimizing the impact of the distortion of the interfaces, in which it enables one to select the optimum
dimensions to get the best values for the maximum current density of the diode.
